NH3 plasma interface modification for silicon surface passivation at very low temperature

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5320-5323

  Takahashi, Yu ^a   Nigo, Jin ^a   Ogane, Akiyoshi ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Lifetime; Passivation; Surface recombination

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; INFRARED SPECTROSCOPY; MASS SPECTROMETRY; NITRIDES; NONMETALS; PASSIVATION; PLASMA APPLICATIONS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMAS; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SILICON NITRIDE; SILICON WAFERS; SOLAR ENERGY; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

CRYSTALLINE SILICON SOLAR CELLS; CZOCHRALSKI; DEPOSITION TEMPERATURES; EFFECTIVE LIFETIMES; FOURIER TRANSFORM INFRARED; INTERFACE MODIFICATIONS; LIFETIME; LOW DEPOSITION TEMPERATURES; MONOCRYSTALLINE SILICONS; PASSIVATION LAYERS; PHOTOCONDUCTANCE; PHOTOEMISSION SPECTROSCOPIES; PLASMA TREATMENTS; SECONDARY IONS; SILICON NITRIDE (SIN; SILICON SURFACE PASSIVATIONS; SURFACE PASSIVATIONS; SURFACE RECOMBINATION; SURFACE RECOMBINATIONS; TEMPERATURE DEPOSITIONS; VERY LOW TEMPERATURES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 55149092776     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5320     Document Type: Article

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