SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 6 PART 2, 2008, Pages 4881-4885

Dual grating interferometric lithography for 22-nm node

(8) Shiotani, Hideaki a Suzuki, Shota a Lee, Dong Gun b Naulleau, Patrick c Fukushima, Yasuyuki a Ohnishi, Ryuji a Watanabe, Takeo a Kinoshita, Hiroo a

a UNIVERSITY OF HYOGO (Japan)

b SAMSUNG Electronics (South Korea)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

Dual grating; EUVL; Interference lithography; Partial coherent; Resist; Single grating

Indexed keywords

BENDING (DEFORMATION); ELECTRIC DISCHARGES; ELECTROMAGNETIC WAVES; EXTREME ULTRAVIOLET LITHOGRAPHY; INTERFEROMETRY; LASER PRODUCED PLASMAS; LIGHT SOURCES; LIGHTING; MAGNETS; OPTICAL SYSTEMS; PHOTOLITHOGRAPHY; PHOTORESISTS; PLASMAS; ROUGHNESS MEASUREMENT; ULTRAVIOLET DEVICES;

DUAL GRATING; EUVL; INTERFERENCE LITHOGRAPHY; PARTIAL COHERENT; RESIST; SINGLE GRATING;

LIGHT;

EID: 55049124996 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.4881 Document Type: Article

Times cited : (20)

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