Unified tunnelling-diffusion theory for Schottky and very thin MOS structures

Solid-State Electronics

Volumn 52, Issue 11, 2008, Pages 1755-1765

  Racko, J ^a   Valent, P ^a   Benko, P ^a   Donoval, D ^a   Harmatha, L ^a   Pintes P ^a   Breza, J ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

MOS structure; Schottky structure; Tunnelling

Indexed keywords

CIVIL AVIATION; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; INSULATING MATERIALS; INSULATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; THERMIONIC EMISSION; TUNNELING (EXCAVATION);

BOUNDARY CONCENTRATIONS; CONTINUITY EQUATIONS; DIFFUSION THEORIES; DIRECT TUNNELLING; FREE CHARGE CARRIERS; INSULATING LAYERS; INSULATOR LAYERS; MOS STRUCTURE; MOS STRUCTURES; SCHOTTKY; SCHOTTKY STRUCTURE; SEMICONDUCTOR INTERFACES; THIN INSULATING LAYERS; TUNNELLING; V CURVES;

CHARGE CARRIERS;

EID: 55049121692     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.07.009     Document Type: Article

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