Fabrication of glassy carbon molds using hydrogen silsequioxane patterned by electron beam lithography as O2 dry etching mask

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 2, 2008, Pages 5167-5170

  Yasui, Manabu ^a   Sugiyama, Yoshinari ^b   Takahashi, Masaharu ^c   Kaneko, Satoru ^a   Uegaki, Jun Ichi ^b   Hirabayashi, Yasuo ^a   Sugimoto, Koh Ichi ^d   Maeda, Ryutaro ^c  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b Elionix Inc   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d SHINSHU UNIVERSITY   (Japan)

Author keywords

Electron beam lithography; Glassy carbon; Hot embossing of glass; Hydrogen silsesquioxane; Oxygen dry etching; Pyrex glass

Indexed keywords

CARBON; CURING; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON GUNS; ELECTRON OPTICS; ELECTRONS; ETCHING; GLASS; HYDROGEN; INDUCTIVELY COUPLED PLASMA; MOLDS; NONMETALS; OPTICAL GLASS; OPTICAL INSTRUMENTS; OPTICAL PROPERTIES; OXYGEN; PARTICLE BEAMS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; REACTIVE ION ETCHING;

CANDIDATE MATERIALS; COUPLED PLASMAS; DIE MACHINING; DRAFT ANGLES; ETCHING MASKS; ETCHING SELECTIVITIES; GLASSY CARBON; GLASSY CARBONS; HOT EMBOSSING OF GLASS; HYDROGEN SILSEQUIOXANE; ICP-RIE; MOLD MATERIALS; MOLD SURFACES; OXYGEN PLASMAS; OXYGEN RADICALS; PYREX GLASS; PYREX GLASSES; SIDE ETCHINGS; SILSESQUIOXANE; SUBMICRON STRUCTURING;

DRY ETCHING;

EID: 55049119077     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5167     Document Type: Article

References (10)

1. Y. Okuno and H. Hosokawa: 4th Int. Conf. Nanoimprint and Nanoprint Technology Dig. Pap., 2005, p. 166.
2. Processing Technologies and Evaluation for Non-spherical Lens (Technical Information Institute, 2005) p. 44.
3. M. Takahashi, K. Sugimoto, and R. Maeda: Jpn. J. Appl. Phys. 44 (2005) 5600.
4. Kyung-Oh Mini, S. Tanaka, and M. Esashi: Proc. 22nd Sensor Symp., 2005, p. 494.
5. M. Yasui, M. Takahashi, S. Kaneko, T. Tsuchida, Y. Hirabayashi, K. Sugimoto, J. Uegaki, and R. Maeda: Jpn. J. Appl. Phys. 46 (2007) 6378.
6. Y. Matsubara, J. Taniguchi, and I. Miyamoto: Jpn. J. Appl. Phys. 45 (2006) 5538.
7. K. Nakamatsu, M. Kawamori, and S. Matsui: 19th Int. Microprocesses and Nanotechnology Conf. Dig. Pap., 2006, p. 278.
8. http://www.vector.co.jp/soft/win31/edu/se059369.html
9. M. Kawamori, K. Nakamatsu, Y. Haruyama, and S. Matsui: Jpn. J. Appl. Phys. 45 (2006) 8994.
10. Y. Onishi. H. Takagi, Y. Hirai, M. Takahashi, R. Maeda, T. Tanabe, and Y. Iriye: 20th Int. Microprocesses and Nanotechnology Conf. Dig. Pap., 2007, p. 442.