Size-dependent structural characterization of silicon nanowires

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 2, 2008, Pages 5053-5056

  Akhtar, Saeed ^a   Usami, Koichi ^a   Tsuchiya, Yoshishige ^a,b   Mizuta, Hiroshi ^b,c   Oda, Shunri ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Au droplets; Low pressure chemical vapor deposition; Si nanowires; Si2H6; VLS mechanism

Indexed keywords

ELECTRIC WIRE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POWDERS; SINGLE CRYSTALS; VAPORS;

AU DROPLETS; CRITICAL VALUES; CRYSTAL PERFECTIONS; DEFECT FORMATIONS; EXPERIMENTAL CONDITIONS; PERIODIC; SI NANOWIRES; SI2H6; SILICON NANOWIRES; STRUCTURAL CHARACTERIZATIONS; TWIN FORMATIONS; VLS MECHANISM;

SILICON;

EID: 55049098329     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5053     Document Type: Article

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