Shallow acceptors in Ge/GeSi multi-quantum well heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 608-611

  Aleshkin, V Y ^a   Andreev, B A ^a   Gavrilenko, V I ^a   Erofeeva, I V ^a   Kozlov, D V ^a   Kuznetsov, O A ^a   Moldavskaya, M D ^a   Novikov, A V ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS;

FAR-INFRARED PHOTOCONDUCTIVITY; GERMANIUM SELENIDE; SHALLOW ACCEPTORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033700665     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00394-X     Document Type: Article

References (7)

1. Pasquarello A., Andreani L.C., Buczko R. Phys. Rev. B. 40:1989;5602.
2. Loehr J.P., Singh J. Phys. Rev. B. 41:1990;3695.
3. Helm M., Peeters F.M., DeRosa F.et al. Phys. Rev. B. 43:1991;13 983.
4. Holmes S., Cheng J.P., McCombe B.D.et al. Phys. Rev. Lett. 69:1992;2571.
5. Gavrilenko V.I., Erofeeva I.V., Korotkov A.L.et al. JETP Lett. 65:1997;209.
6. Aleshkin V.Ya., Gavrilenko V.I., Erofeeva I.V.et al. Fiz. Tekh. Poluprovodn. (Semiconductors). 32:1998;1240.
7. Bir G.L., Pikus G.E. Symmetry and Strain-Induced Effects in Semiconductors. 1974;Wiley, New York.