Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 323-326

  Toyoda, E ^a,b   Sakai, A ^b   Nakatsuka, O ^b   Isogai, H ^a   Senda, T ^a   Izunome, K ^a   Ogawa, M ^b   Zaima, S ^b  

^a Nissei Bldg   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Direct wafer bonding; Si(001); Si(011); Transmission electron microscope

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPES; MICROSCOPIC EXAMINATION; POWDERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

BONDING INTERFACE STRUCTURES; BONDING INTERFACES; BONDING STRUCTURES; CRYSTALLINITY; DIRECT WAFER BONDING; INDUCED STRESSES; REGULAR ARRAYS; SI SUBSTRATES; SI(001); SI(001) SUBSTRATE; SI(011); TRANSMISSION ELECTRON MICROSCOPE; X-RAY DIFFRACTIONS; XRD ANALYSES;

WAFER BONDING;

EID: 54849436405     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.093     Document Type: Article

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