Fabrication of directly bonded Si substrates with hybrid crystal orientation for advanced bulk CMOS technology

ECS Transactions

Volumn 3, Issue 4, 2006, Pages 409-415

  Bourdelle, K K ^a   Rayssac, O ^a   Lambert, A ^a   Fournel, F ^b   Hebras, X ^a   Allibert, F ^a   Figuet, C ^a   Boussagol, A ^a   Berne, C ^a   Tsyganenko, K ^a   Letertre, F ^a   Mazure C ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL ORIENTATION; ELECTRON MOBILITY; FABRICATION; OPTIMIZATION; SUBSTRATES;

ENGINEERED SUBSTRATES; HYBRID ORIENTATION SUBSTRATES; NMOS TRANSISTORS; SMART CUT METHOD;

SILICON WAFERS;

EID: 33846863608     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355775     Document Type: Conference Paper

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