Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealing

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 391-394

  Moutanabbir, O ^a,b   Miyamoto, S ^a   Sagara, A ^a   Oshikawa, H ^a   Itoh, K M ^a  

^a KEIO UNIVERSITY   (Japan)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Germanium; Molecular Beam Epitaxy Photoluminescence; Nanostructure; Quantum dot; Self assembly; Silicon; Superlattice

Indexed keywords

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GERMANIUM; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MULTILAYERS; PROTONS; QUANTUM ELECTRONICS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SILICON; TENSILE STRAIN; TUNING;

BLUESHIFTED; EMISSION ENERGIES; FLASH ANNEALING; HUT CLUSTERS; ION DOSES; LOW TEMPERATURES; LUMINESCENCE EMISSIONS; MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE; MOLECULAR-BEAM EPITAXIES; MULTILAYER STRUCTURES; PL EMISSIONS; PL INTENSITIES; PL SPECTRUMS; PROTON IMPLANTATIONS; QUANTUM DOT; RADIATION DEFECTS; SELF-ASSEMBLY; SI INTERLAYERS; SINGLE-LAYER; TEMPERATURE INDUCES; THERMAL ANNEALING; THERMAL BEHAVIORS;

ANNEALING;

EID: 54849427249     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.105     Document Type: Article

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