Proton implantation-induced intermixing of InAsInP quantum dots

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Barik, S ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INDIUM COMPOUNDS; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PROTONS; THERMODYNAMIC STABILITY;

GAINASP; IMPLANTATION-INDUCED ENERGY SHIFT.; INTERDIFFUSION; OPTIMUM ANNEALING TEMPERATURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33744810582     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208371     Document Type: Article

References (7)

1. L. V. Dao, M. Gal, C. Carmody, H. H. Tan, and C. Jagadish, J. Appl. Phys. 88, 5252 (2000).
2. P. Lever, H. H. Tan, C. Jagadish, P. Reece, and M. Gal, Appl. Phys. Lett. 82, 2053 (2003).
3. W. Lu, Y. L. Ji, G. B. Chen, N. Y. Tang, X. S. Chen, S. C. Shen, Q. X. Zhao, and M. Willander, Appl. Phys. Lett. 83, 4300 (2003).
4. C. K. Chia, S. J. Chua, S. Tripathy, and J. R. Dong, Appl. Phys. Lett. 86, 051905 (2005).
5. B. Salem, V. Aimez, D. Morris, A. Turala, P. Regreny, and M. Gendry, Appl. Phys. Lett. 87, 241115 (2005).
6. S. Barik, H. H. Tan, and C. Jagadish, Nanotechnology 17, 1867 (2006).
7. C. Carmody, H. H. Tan, and C. Jagadish, J. Appl. Phys. 93, 4468 (2003).