Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 34-37

  Zhao, M ^a   Karim, A ^a   Hansson, G V ^a   Ni, W X ^a,c   Townsend, P ^b   Lynch, S A ^b   Paul, D J ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Molecular beam epitaxy (MBE); Quantum cascade; Si SiGe; Transmission electron microscopy (TEM); X ray diffraction

Indexed keywords

BORON; BORON COMPOUNDS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; GERMANIUM; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON;

BORON DOPING CONCENTRATIONS; CRYSTALLINE QUALITIES; DEVICE CHARACTERIZATIONS; DOPING CONCENTRATIONS; GROWN STRUCTURES; GROWTH CONTROLS; GROWTH PARAMETERS; LAYER UNDULATIONS; MATERIAL CHARACTERIZATIONS; MOLECULAR BEAM EPITAXY (MBE); MOLECULAR BEAM EPITAXY GROWTHS; MOLECULAR-BEAM EPITAXIES; NONUNIFORM STRAINS; OPTIMIZED CONDITIONS; QUANTUM CASCADE; QUANTUM CASCADE STRUCTURES; QUANTUM CASCADES; SI/SIGE; THZ EMISSIONS; VIRTUAL SUBSTRATES; X-RAY DIFFRACTION;

MOLECULAR BEAMS;

EID: 54849420271     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.091     Document Type: Article

References (14)

1. Murzyn P., Pidgeon C.R., Wells J.P.R., Bradley I.V., Ikonic Z., Kelsall R.W., Harrison P., Lynch S.A., Paul D.J., Arnone D.D., Robbins D.J., Norris D., and Cullis A.G. Appl. Phys. Lett. 80 (2002) 1456
2. Borak A. Science 308 (2005) 638
3. Lynch S.A., Paul D.J., Townsend P., Matmon G., Suet Z., Kelsall R.W., Ikonic Z., Harrison P., Zhang J., Norris D.J., Cullis A.G., Pidgeon C.R., Murzyn P., Murdin B., Bain M., Gamble H.S., Zhao M., and Ni W.-X. IEEE J. Sel. Top. Quantum Electron. 12 (2006) 1570
4. Walther C., Scalari G., Faist J., Beere H., and Ritchie D. Appl. Phys. Lett. 89 (2006) 231121
5. Diehl L., Mentese S., Müller E., Grützmacher D., Sigg H., Gennser U., Sagnes I., Campidelli Y., Kermarrec O., Bensahel D., and Faist J. Appl. Phys. Lett. 81 (2002) 4700
6. Scalari G., Ajili L., Faist J., Beere H., Linfield E., Ritchie D., and Davies G. Appl. Phys. Lett. 82 (2003) 3165
7. Paul D.J., Matmon G., Townsend P., Zhang J., Zhao M., and Ni W.-X. IETE Journal of Research 53 (2007) 285
8. Ni W.-X., Ekberg J.O., Joelsson K.B., Radamson H.H., Henry A., Shen G.D., and Hansson G.V. J. Cryst. Growth 157 (1995) 285
9. Zhao M., Ni W.-X., Townsend P., Lynch S.A., Paul D.J., Hsu C.C., and Chang M.N. Thin Solid Films 508 (2006) 24
10. Zhao M., Karim A., Ni W.-X., Pidgeon C.R., Phillips P.J., Carder D., Murdin B.N., Fromherz T., and Paul D.J. J. Lumin. 121 (2006) 403
11. Grützmacher D., Mentese S., Müller E., Diehl L., Sigg H., Campidelli Y., Kermarrec O., Bensahel D., Roch T., Stangl J., and Bauer G. J. Cryst. Growth 251 (2003) 707
12. Takamiya H., Miura M., Usami N., Hattori T., and Shiraki Y. Thin Solid Films 369 (2000) 84
13. Zhou X., Shi B., Jiang Z., Jiang W., Hu D., Gong D., Fan Y., Zhang X., Wang X., and Li Y. Thin Solid Films 369 (2000) 92
14. Chen P.S., Pei Z., Peng Y.H., Lee S.W., and Tsai M.J. Mater. Sci. Eng., B 108 (2004) 213