Ab-initio vibrational properties of SiGe alloys

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 395-397

  Torres, V J B ^a   Coutinho, J ^a   Briddon, P R ^b   Barroso, M ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Ab initio calculations; Raman shift; SiGe alloys; Vibrational modes

Indexed keywords

ALLOYS; ATOMIC PHYSICS; ATOMS; CERIUM ALLOYS; CONCENTRATION (PROCESS); EXPERIMENTS; GERMANIUM; METALLIC COMPOUNDS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON;

AB-INITIO CALCULATIONS; DEGREES OF FREEDOMS; DYNAMICAL MATRIXES; EXPERIMENTAL DATUM; FREQUENCY SHIFTS; GE ATOMS; GE CONCENTRATIONS; RAMAN SHIFT; RAMAN SPECTRUM; SI ATOMS; SIGE ALLOYS; SUPERCELL; VIBRATIONAL MODES; VIBRATIONAL PROPERTIES; WIDE BANDS;

SILICON ALLOYS;

EID: 54849413350     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.041     Document Type: Article

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