Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 376-379

  Gelloz, B ^a   Koyama, H ^b   Koshida, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b HYOGO UNIVERSITY OF TEACHER EDUCATION   (Japan)

Author keywords

Luminescence; Nanostructures; Polarization memory; Silicon

Indexed keywords

ANISOTROPY; ANNEALING; ELECTROCHEMICAL OXIDATION; ELECTROMAGNETIC WAVES; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE SILICON; NANOCRYSTALS; NANOSTRUCTURES; ORGANIC POLYMERS; PASSIVATION; PERMANENT MAGNETS; POLARIZATION; POROUS SILICON; SILICON; VAPORS; WATER VAPOR;

AMORPHOUS OXIDES; AMORPHOUS SIS; ANISOTROPIC; BLUE EMISSIONS; ELECTRICAL NATURES; EMISSION MECHANISMS; LOCALIZED STATES; LOW EMISSIONS; NANOCRYSTALLINE POROUS SILICONS; PL EMISSIONS; PL INTENSITIES; POLARIZATION MEMORIES; POLARIZATION MEMORY; POROUS SIS; RED EMISSION BANDS; RED LUMINESCENCES; RED PHOTOLUMINESCENCES; SI NANOCRYSTALS; WATER VAPOR ANNEALING;

AMORPHOUS SILICON;

EID: 54849412969     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.092     Document Type: Article

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