Effect of o 2 partial pressure and substrate temperature on the plasma emission spectra and ZnO growth behavior

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 4, 2008, Pages 961-964

  Liu, M ^a   Ma, C Y ^a   Zhang, Q Y ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL PRESSURES; CRITICAL TEMPERATURES; DEPOSITED FILMS; EMISSION LINES; GROWTH BEHAVIORS; MAGNETRON SPUTTERING METHODS; METAL SPUTTERING; ON-LINE; OPTICAL EMISSION SPECTRUMS; OXYGEN PARTIAL PRESSURES; OXYGEN PRESSURES; PLASMA EMISSIONS; STOICHIOMETRIC RATIOS; SUBSTRATE TEMPERATURES;

EMISSION SPECTROSCOPY; LEAKAGE (FLUID); MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; OXYGEN; PLASMAS; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC ALLOYS; ZINC OXIDE;

FILM GROWTH;

EID: 54849404160     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778316     Document Type: Article

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