Concentration profiles of antimony-doped shallow layers in silicon

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages 728-732

  Alzanki, T ^a   Gwilliam, R ^a   Emerson, N ^a   Tabatabaian, Z ^a   Jeynes, C ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; HALL EFFECT; ION IMPLANTATION; LATTICE CONSTANTS; MOSFET DEVICES; PRECIPITATION (CHEMICAL); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON;

ANTIMONY IMPLANTS; ARSENIC CLUSTERING; ELECTRICAL CHARACTERIZATION;

ANTIMONY;

EID: 2942554986     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/012     Document Type: Article

References (15)

1. Sze S M 1988 VLSI Technology 2nd edn (Singapore: McGraw-Hill)
2. Kim R, Aoki T, Hirose T, Furuta Y, Hayashi S, Shano T and Taniguchi K 2000 Int Electron Devices Meeting 523
3. Rousseau P M, Griffin P B, Fang W T and Plummer J D 1998 J. Appl. Phys 84 3593
4. Watkins G D 1997 Mater. Res. Soc. Symp, Proc. 469 139
5. Sai-Halasz G A and Harrison H B 1986 IEEE Electron Device Lett. 7 534
6. Shibahara K, Mifuji M, Kawabata K, Kugimiya T, Furumoto H, Tsuno M, Yokoyama S, Nagata M, Miyazaki S and Hirose M 1996 Techn. Dig. Int. Electron Device Meet. p 579
7. Shibahara K 2002 IEICE Trans. Electron. 85 1091
8. Shibahara K and Onimatsu D 2000 Mater. Res. Soc. Symp. 610 B8.5.1
9. Sai-Halasz G A, Short K T and Williams J S 1985 IEEE Electron Device Lett. 6 285
10. Jeynes C, Barradas N P, Marriott P, Boudreault G, Jenkin M, Wendler E and Webb R P 2003 J. Phys. D: Appl. Phys. 36 R97-R126
11. Trumbore F A 1960 Bell Systems Tech. J. 39 205
12. Fage-Pedersen J, Gaiduk P, Lundsgaard J and Nylandsted Larsen A 2000 J. Appl. Phys. 88 3254
13. Alzanki T, Gwilliam R, Emerson N G and Sealy B J 2004 J. Electron Mater. at press
14. Larsen N 1986 J. Appl. Phys. 59 1908
15. Seah M P et al Ultra-thin SiO on Si, V: Results of a CCQM Pilot Study of Thickness Measurements Surf. Interface Anal. at press