Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry

Micron

Volumn 40, Issue 1, 2009, Pages 66-69

  Ichihara, Chikara ^a,b   Kawakami, Nobuyuki ^a   Yasuno, Satoshi ^c   Hino, Aya ^a   Fujikawa, Kazuhisa ^c   Kobayashi, Akira ^a   Ochi, Mototaka ^a   Gotoh, Hiroshi ^a   Kugimiya, Toshihiro ^c  

^a KOBE STEEL LTD   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c KOBELCO RESEARCH INSTITUTE INC   (Japan)

Author keywords

Al Ni; Depth resolution; Direct contact; High resolution RBS; TFT

Indexed keywords

ALUMINA; AMORPHOUS FILMS; AMORPHOUS SILICON; ARGON; BACKSCATTERING; INERT GASES; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; NICKEL; NICKEL ALLOYS; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; SPECTROMETERS; SPECTROMETRY; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

AL-NI; DEPTH RESOLUTION; DIRECT CONTACT; HIGH-RESOLUTION RBS; TFT;

ALUMINUM;

EID: 54349103254     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2008.01.004     Document Type: Article

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