Novel phase modulator for ELA-based lateral growth of Si

Journal of the Electrochemical Society

Volumn 153, Issue 1, 2006, Pages

  Taniguchi, Y ^a   Matsumura, M ^a   Jyumonji, M ^a   Ogawa, H ^a   Hiramatsu, M ^a  

^a Advanced LCD Technologies Development Center Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; CRYSTALS; EXCIMER LASERS; GRAIN BOUNDARIES; IRRADIATION; PHASE MODULATION;

EXCIMER LASER ANNEALING (ELA); EXCIMER-LASER CRYSTALLIZATION METHOD; HIGH PACKING EFFICIENCY; LIGHT INTENSITY DISTRIBUTION;

SILICON;

EID: 33645531884     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2133684     Document Type: Article

References (5)

1. Y. Kimura, M. Jyumonji, M. Hiramatsu, M. Nishitani, and M. Matsumura, in Thin Film Transistor Technologies VI, Y. Kuo, Editor, PV 2002-23, p. 82, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
2. Y. Taniguchi, M. Jyumonji, Y. Kimura, H. Ogawa, M. Hiramatsu, and M. Matsumura, in Extended Abstracts of the 51st Spring Meeting of The Japan Society of Applied Physics and Related Societies, p. 929, The Japan Society of Applied Physics, Tokyo (2004) [in Japanese].
3. M. Born and E. Wolf, Principle of Optics, 7th ed., p. 599, Cambridge University Press, Cambridge, MA (1980).
4. M. Born and E. Wolf, Principle of Optics, 7th ed., p. 543, Cambridge University Press, Cambridge, MA (1980).
5. T. Katou, Y. Taniguchi, M. Hiramatsu, K. Azuma, and M. Matsumura, Paper to be presented at IDW/AD '05, The 12th International Display Workshops, Takamatsu, Dec 2005.