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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 A, 2007, Pages 2968-2972

Experimental study of two-dimensional confinement effects on reverse-biased current characteristics of ultrathin silicon-on-insulator lateral, unidirectional, bipolar-type insulated-gate transistors

(1) Omura, Yasuhisa a

a KANSAI UNIVERSITY (Japan)

Author keywords

Generation recombination process; Lifetime; Lubistor; Quantum effects; SOI; Tunnel

Indexed keywords

ACTIVATION ENERGY; BIAS CURRENTS; BIPOLAR TRANSISTORS; QUANTUM ELECTRONICS; SILICON ON INSULATOR TECHNOLOGY;

CURRENT DEPENDENCE; LUBISTORS; QUANTUM TRANSPORT;

GATES (TRANSISTOR);

EID: 34547924172 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.2968 Document Type: Article

Times cited : (8)

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