Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(1 0 0) substrate

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 244-247

  Noh, Y K ^a   Park, S R ^a   Kim, M D ^a   Kwon, Y J ^b   Oh, J E ^b   Kim, Y H ^c   Lee, J Y ^c   Kim, S G ^d   Chung, K S ^e   Kim, T G ^f  

^a Chungnam National University   (South Korea)

^b Hanyang University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Joongbu University   (South Korea)

^e Kyung Hee University   (South Korea)

^f Korea University   (South Korea)

Author keywords

A1. Atomic force microscopy; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY;

ANTIMONIDES; FLUX RATIO; SEMICONDUCTING III-V MATERIALS; WETTING LAYERS (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947422098     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.187     Document Type: Article

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