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Volumn 44, Issue 1, 2008, Pages 21-25
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Tight-binding versus effective mass approximation calculation of electronic structures of semiconductor nanocrystals and nanowires
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Author keywords
Effective mass approximation; Energy structure; Nanostructure; Tight binding
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Indexed keywords
ATOMIC PHYSICS;
ATOMS;
BAND STRUCTURE;
BINDING ENERGY;
DANGLING BONDS;
ELECTRIC CONDUCTIVITY;
ELECTRIC WIRE;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
ENERGY GAP;
GALLIUM ALLOYS;
GERMANIUM;
HYDROGEN;
HYDROGEN BONDS;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALS;
NANOSTRUCTURES;
NANOWIRES;
POLYNOMIAL APPROXIMATION;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR MATERIALS;
SILICON;
WIRE;
ANALYTICAL MODELS;
BAND GAPS;
BINDING METHODS;
EFFECTIVE BAND GAPS;
EFFECTIVE MASS APPROXIMATION;
EFFECTIVE MASSES;
ELECTRON BAND STRUCTURES;
ELECTRON EFFECTIVE MASSES;
ELECTRONIC STRUCTURE OF SEMICONDUCTORS;
ENERGY MINIMUMS;
ENERGY STRUCTURE;
FULL BAND STRUCTURES;
HYDROGEN ATOMS;
PRACTICAL USES;
SEMICONDUCTOR NANOCRYSTALS;
SI NANOWIRES;
TIGHT-BINDING;
NANOSTRUCTURED MATERIALS;
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EID: 54049145608
PISSN: 09270256
EISSN: None
Source Type: Journal
DOI: 10.1016/j.commatsci.2008.01.023 Document Type: Article |
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Times cited : (25)
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References (16)
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