Statistical emission of electrons from nanocrystalline silicon quantum dot memory nodes in a few-electron MOSFET memory device

Solid State Communications

Volumn 125, Issue 10, 2003, Pages 567-570

  Banerjee, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A. nanostructures; A. semiconductors; D. MOSFET memory

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; ELECTRON EMISSION; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

STATISTICAL EMISSION;

MOSFET DEVICES;

EID: 0037370578     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(03)00006-1     Document Type: Article

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