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Volumn 16, Issue 3, 2005, Pages 177-181

An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; BAND STRUCTURE; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ENERGY GAP; HYDROGENATION; SEMICONDUCTING SILICON;

EID: 15444365698     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10854-005-6598-1     Document Type: Article
Times cited : (12)

References (29)
  • 1
    • 0004123419 scopus 로고
    • "Hydrogenated Amorphous Silicon"
    • (Cambridge New York)
    • R. A. Street 1991 "Hydrogenated Amorphous Silicon" (Cambridge New York 1991).
    • (1991)
    • Street, R.A.1
  • 21
    • 15444377107 scopus 로고    scopus 로고
    • The data of Jackson et al. [20] is from Figure 8 of Jackson et al. [20]
    • The data of Jackson et al. [20] is from Figure 8 of Jackson et al. [20].
  • 25
    • 15444380605 scopus 로고    scopus 로고
    • note
    • While band structures, in the crystalline sense, do not exist for the case of amorphous semiconductors, the effects of non-parabolicity are still felt in amorphous semiconductors.
  • 26
    • 15444364847 scopus 로고    scopus 로고
    • note
    • It should be noted, however, that Singh [20] has formulated an effective mass formalism for the case of amorphous semiconductors.
  • 28
    • 0003565888 scopus 로고
    • "Semiconductor Physics and Devices"
    • Irwin Boston
    • D. A. Neamen 1992 "Semiconductor Physics and Devices" Irwin Boston
    • (1992)
    • Neamen, D.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.