Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Li, D Y ^a   Huang, Y Z ^a   Zhu, J J ^a   Zhao, D G ^a   Liu, Z S ^a   Zhang, S M ^a   Ye, X J ^a   Chong, M ^a   Chen, L H ^a   Yang, H ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

LASER MODES; OPTICAL RESOLVING POWER; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

INGAN; QUANTUM WELL LASER DIODES; SLOPE EFFICIENCY; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 33748312251     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2260658     Document Type: Article

References (11)

1. S. Nakamura et al., Appl. Phys. Lett. 72, 211 (1998).
2. M. Kneissl, D. P. Bour, C. G. Van de Walle, L. T. Romano, J. E. Northrup, R. M. Wood, M. Teepe, and N. M. Johnson, Appl. Phys. Lett. 75, 581 (1999).
3. S. Goto, M. Ohta, Y. Yabuki, Y. Hoshina, K. Naganuma, K. Tamamura, and M. Ikeda, Phys. Status Solidi A 200, 122 (2003).
4. K. B. Kahen, L. G. Shantharama, J. P. Shepherd, and D. L. Peterson, Appl. Phys. Lett. 62, 1317 (1993).
5. M. Achtenhagen and A. Hardy, Appl. Phys. Lett. 74, 1364 (1999).
6. U. T. Schwarz et al., Appl. Phys. Lett. 86, 161112 (2005).
7. C. Eichler, D. Hofstetter, W. W. Chow, S. Miller, A. Weimar, A. Lell, and V. Harle, Appl. Phys. Lett. 84, 2473 (2004).
8. U. Tisch, B. Meyler, O. Katz, E. Finkman, and J. Salzman, J. Appl. Phys. 89, 2676 (2001).
9. K. G. Gan and J. E. Bowers, IEEE Photonics Technol. Lett. 16, 1256 (2004).
10. M. Brunner, K. Gulden, R. Hovel, M. Moser, and M. Ilegems, Appl. Phys. Lett. 76, 7 (2000).
11. U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kummler, A. Lell, and V. Harle, Appl. Phys. Lett. 83, 4095 (2003).