Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

  Hahn, Torsten ^a   Schmerler, S ^a   Hahn, S ^a   Niklas, J R ^a   Gruendig Wendrock, Bianca ^b  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b Deutsche Solar AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INTERACTIONS; DEFECT MODELING; DEFECT SPECTROSCOPY; DEFECTS IN SEMICONDUCTORS; EXPERIMENTAL METHODS; FIRST PRINCIPLES; IRON CONCENTRATIONS; LIFETIME MEASUREMENTS; NEW APPROACHES; NUMERICAL SOLUTIONS; RATE EQUATIONS; THEORETICAL MODEL;

CHARGE CARRIERS; EXPERIMENTS; NUMERICAL METHODS;

DEFECTS;

EID: 53649092968     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9616-2     Document Type: Article

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