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Volumn 53, Issue 3, 2008, Pages 1575-1579

Optical properties of GaN by using ellipsometry and a band calculation

Author keywords

Band structure; Dielectric function; Ellipsometry; GaN

Indexed keywords


EID: 53549086921     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.1575     Document Type: Conference Paper
Times cited : (11)

References (16)
  • 8
    • 53549087960 scopus 로고    scopus 로고
    • Model VUV-VASE System of the J. A. Woollam Co., Inc., Lincoln, NE 68508-2243 U.S.A.
    • Model VUV-VASE System of the J. A. Woollam Co., Inc., Lincoln, NE 68508-2243 U.S.A.
  • 12
    • 53549132154 scopus 로고    scopus 로고
    • Craig M. Herzinger and Blaine D. Johs, U.S. Patent Filed 14 Aug 1995; Serial No. 5796983.
    • Craig M. Herzinger and Blaine D. Johs, U.S. Patent Filed 14 Aug 1995; Serial No. 5796983.
  • 13
    • 53549125444 scopus 로고    scopus 로고
    • M. Cardona, in Modulation Spectroscopy, Suppl. 11 of Solid State Physics, edited by F. Seitz, D. Turnbull and H. Ehrenreich (Academic, New York, 1969).
    • M. Cardona, in Modulation Spectroscopy, Suppl. Vol. 11 of Solid State Physics, edited by F. Seitz, D. Turnbull and H. Ehrenreich (Academic, New York, 1969).
  • 14
    • 0001720790 scopus 로고
    • edited by M. Balkanski, North-Holland, Amsterdam
    • D. E. Aspnes, in Handbook on Semiconductors, edited by M. Balkanski, (North-Holland, Amsterdam, 1980), p. 109.
    • (1980) Handbook on Semiconductors , pp. 109
    • Aspnes, D.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.