Donor level of interstitial hydrogen in GaAs

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 614-617

  Dobaczewski, L ^a   Bonde Nielsen, K ^b   Nylandsted Larsen, A ^b   Peaker, A R ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b AARHUS UNIVERSITY   (Denmark)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Hydrogen in GaAs; Laplace DLTS; Universal level alignment

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; HYDROGEN; IONIZATION; LIGHTING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON;

DEPLETION LAYER; DONOR LEVEL; GAAS; INTERSTITIAL HYDROGEN;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33645137564     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.155     Document Type: Conference Paper

References (9)

1. S.J. Breuer, R. Jones, P.R. Briddon, and S. Öberg Phys. Rev. B 53 1996 16289
2. A.A. Bonapasta Phys. Rev. B 58 1998 10378
3. C. Wang, and Q.-M. Zhang Phys. Rev. B 59 1999 4864
4. C.G. Van de Walle, and J. Neugebauer Nature 423 2003 626
5. See, e.g., a review: S. F. J. Cox, J. Phys.: Condens. Mater 15 (2003) R1727.
6. K. Bonde Nielsen, L. Dobaczewski, S. Sogard, and B. Bech Nielsen Phys. Rev. B 65 2002 075205
7. L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A.R. Peaker, and V.P. Markevich Phys. Rev. B 69 2004 245207
8. L. Dobaczewski, A.R. Peaker, and K. Bonde Nielsen J. Appl. Phys. 96 2004 4689
9. K. Bonde Nielsen, B. Bech Nielsen, J. Hansen, E. Andersen, and J.U. Andersen Phys. Rev. B 60 1999 1716