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Volumn 83, Issue 5, 2003, Pages 923-925

Interstitial H and H2 in SiC

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; PROBABILITY DENSITY FUNCTION; SILICON CARBIDE; THERMODYNAMICS;

EID: 0041376531     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598646     Document Type: Article
Times cited : (25)

References (27)
  • 3
    • 0003367212 scopus 로고
    • Physics of group IV elements and III-V compounds
    • Group III (Springer, Berlin)
    • Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein, New Series, Group III Vol. 17, edited by O. Madelund (Springer, Berlin, 1982).
    • (1982) Landolt-Börnstein, New Series , vol.17
    • Madelund, O.1
  • 10
    • 0042748413 scopus 로고    scopus 로고
    • M. S. thesis, Royal Institute of Technology. Stockholm
    • M. S. Janson, M. S. thesis, Royal Institute of Technology. Stockholm, 1998.
    • (1998)
    • Janson, M.S.1
  • 15
    • 0004086809 scopus 로고    scopus 로고
    • Semiconductors and Semimetals, edited by M. Stavola (Academic, Boston), Chap. 6
    • R. Jones and P. R. Briddon, in Identification of Defects in Semiconductors, Semiconductors and Semimetals Vol. 51 A, edited by M. Stavola (Academic, Boston, 1998), Chap. 6.
    • (1998) Identification of Defects in Semiconductors , vol.51 A
    • Jones, R.1    Briddon, P.R.2
  • 17
    • 20544463457 scopus 로고
    • D. Vanderbilt, Phys. Rev. B 41, 7892 (1990); K. Laasonen, A. Pasquarello, R. Car, C. Lee, and D. Vanderbilt, ibid. 47, 10142 (1993).
    • (1990) Phys. Rev. B , vol.41 , pp. 7892
    • Vanderbilt, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.