Charge-state transitions of muonium in 6H silicon carbide

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 631-634

  Bani Salameh, H N ^a   Meyer, A G ^a   Carroll, B R ^a   Lichti, R L ^a   Celebi, Y G ^b   Chow, K H ^c   King, P J C ^d   Cox, S F J ^d  

^a TEXAS TECH UNIVERSITY   (United States)

^b ISTANBUL UNIVERSITY   (Turkey)

^c UNIVERSITY OF ALBERTA   (Canada)

^d RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

6H SiC; Defect levels; Hydrogen; Muonium

Indexed keywords

ELECTRIC CONDUCTIVITY; HYDROGEN; IONIZATION POTENTIAL; TEMPERATURE CONTROL;

CHARGE-STATE TRANSITIONS; DEFECT LEVELS; MUONIUM;

SILICON CARBIDE;

EID: 36148930215     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.039     Document Type: Article

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