A novel gate drive circuit for low-loss system using IGBT saturation voltage characteristics

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 377-380

  Takizawa, S ^a   Igarashi, S ^a   Kuroki, K ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONVERTERS; ELECTRIC LOSSES; INSULATED GATE BIPOLAR TRANSISTORS; SEMICONDUCTOR DIODES; THYRISTORS; UNINTERRUPTIBLE POWER SYSTEMS; VOLTAGE MEASUREMENT;

GATE DRIVE CIRCUITS;

SWITCHING CIRCUITS;

EID: 0034829395     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. An active gate drive circuit for IGBTs to realize low-noise and snubberless system
2. A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses
3. A new driving circuit for IGBT devices
4. High efficiency drive techniques for the brushless DC motor using four-switch three-phase inverter
5. Intelligent commutation of matrix converter Bi-directional switch cells using novel gate drive techniques