Extraction of η parameter characterising μeff against Eeff curves in strained Si nMOS devices

Electronics Letters

Volumn 44, Issue 20, 2008, Pages 1219-1220

  Bennamane, K ^a   DeMichielis, M ^a,b   Ghibaudo, G ^a   Esseni, D ^b  

^a IMEP LAHC   (France)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 52349108563     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080701     Document Type: Article

References (8)

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3. Takagi, S., Toriumi, A., Iwase, M., and Tango, H.: ' On the universality of inversion layer mobility in Si MOSFET's: Part I: Effects of substrate impurity concentration ', IEEE Trans. Electron Devices, 1994, 41, (12), p. 2357 10.1109/16.337449 0018-9383
4. Huang, C.-L., and Gildenblat, G.Sh.: ' Measurements and modeling of the N-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300K ', IEEE Trans. Electron Devices, 1990, 31, p. 1289 0018-9383
5. Emrani, A., Ghibaudo, G., and Balestra, F.: ' On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers ', Solid State Electron., 1994, 37, (1), p. 111 10.1016/0038-1101(94) 90113-9
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7. Ghibaudo, G., Bruyère, S., Devoivre, T., DeSalvo, B., and Vincent, E.: ' Improved method for the oxide thickness extraction in MOS structures with ultra thin gate dielectrics ', IEEE Trans. Semicond. Manuf., 2000, 13, (2), p. 152 0894-6507
8. Driussi, F., Esseni, D., Selmi, L., Hellstroem, P.-E., Malm, G., Hallstedt, J., Oestling, M., Grasby, T.J., Leadley, D.R., and Mescot, X.: ' Experimental and simulation study of the biaxial strain and temperature dependence of the electron mobility enhancement in Si MOSFETs ', Proc ULIS Conf., 2007, p. 21