P-p isotype organic heterojunction and ambipolar field-effect transistors

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Wang, Haibo ^a   Wang, Xiujin ^a   Yu, Bo ^a   Geng, Yanhou ^a   Yan, Donghang ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; FILMS; GALLIUM ALLOYS; METALS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DIODES; TRANSISTORS; VANADIUM COMPOUNDS;

ACTIVE LAYER THICKNESS; ACTIVE LAYERS; AMBIPOLAR; AMBIPOLAR FIELDS; AMBIPOLAR TRANSPORT; CAPACITANCE-VOLTAGE; CHARGE TRANSPORTING; DEVICE PERFORMANCES; HETERO JUNCTION; IN-FIELD; INTERFACIAL ELECTRONIC STRUCTURES; METAL-OXIDE SEMICONDUCTOR DIODES; NARROW BAND-GAP; P-TYPE SEMICONDUCTORS; VANADYL-PHTHALOCYANINE; WIDE BAND GAPS;

SEMICONDUCTOR MATERIALS;

EID: 52349091175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2987481     Document Type: Article

References (21)

1. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.98799 51, 913 (1987).
2. C. W. Tang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.96937 48, 183 (1986).
3. P. Peumans and S. R. Forrest, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1384001 79, 126 (2001).
4. A. Dodabalapur, H. E. Katz, L. Torsi, and R. C. Haddon, Science SCIEAS 0036-8075 10.1126/science.269.5230.1560 269, 1560 (1995).
5. E. J. Meijer, D. M. de Leeuw, S. Setayesh, E. van Veenendaal, B. -H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, and T. M. Klapwijk, Nat. Mater. NMAACR 1476-1122 10.1038/nmat978 2, 678 (2003).
6. C. Rost, D. J. Gundlach, S. Karg, and W. Rieβ, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1702141 95, 5782 (2004).
7. J. Wang, H. B. Wang, X. J. Yan, H. C. Huang, and D. H. Yan, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/j.cplett.2005.03.072 407, 87 (2005).
8. R. Ye, M. Baba, Y. Oishi, K. Mori, and K. Suzuki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1949731 86, 253505 (2005).
9. H. B. Wang, J. Wang, X. J. Yan, J. W. Shi, H. K. Tian, Y. H. Geng, and D. H. Yan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2190445 88, 133508 (2006).
10. W. J. Pietro, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.19940060314 6, 239 (1994).
11. K. Harada, A. G. Werner, M. Pfeiffer, C. J. Bloom, C. M. Elliott, and K. Leo, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94.036601 94, 036601 (2005).
12. J. Wang, H. B. Wang, X. J. Yan, H. C. Huang, and D. H. Yan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2037204 87, 093507 (2005).
13. H. B. Wang, J. Wang, H. C. Huang, X. J. Yan, and D. H. Yan, Org. Electron. OERLAU 1566-1199 10.1016/j.orgel.2006.04.004 7, 369 (2006).
14. K. M. Lau, J. X. Tang, H. Y. Sun, C. S. Lee, S. T. Lee, and D. H. Yan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2198484 88, 173513 (2006).
15. Y. L. Gao, H. J. Ding, H. B. Wang, and D. H. Yan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2784944 91, 142112 (2007).
16. H. B. Wang, X. J. Wang, H. C. Huang, and D. H. Yan, Appl. Phys. Lett. 93, 103307 (2008).
17. H. Tian, J. Shi, S. Dong, D. Yan, L. Wang, Y. Geng, and F. Wang, Chem. Commun. (Cambridge) 2006, 3498.
18. H. B. Wang, D. Song, J. L. Yang, B. Yu, Y. H. Geng, and D. H. Yan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2751103 90, 253510 (2007).
19. H. Ohta, T. Kambayashi, K. Nomura, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200306015 16, 312 (2004).
20. L. -L. Chua, J. Zaumseil, J. -F. Chang, E. C.-W. Ou, P. K.-H. Ho, H. Sirringhaus, and R. H. Friend, Nature (London) NATUAS 0028-0836 10.1038/nature03376 434, 194 (2005).
21. G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bourguiga, and M. Hajlaoui, Adv. Mater. (Weinheim, Ger.) 10, 923 (1998).