A GaN photodetector integrated structure for wavelength characterization of ultraviolet light

Semiconductor Science and Technology

Volumn 23, Issue 9, 2008, Pages

  Zhao, D G ^a   Jiang, D S ^a   Zhu, J J ^a   Liu, Z S ^a   Zhang, S M ^a   Yang, Hui ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUBES; GALLIUM ALLOYS; GALLIUM NITRIDE; NETWORKS (CIRCUITS); OPTOELECTRONIC DEVICES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; ULTRAVIOLET RADIATION;

INTEGRATED DIODES; INTEGRATED STRUCTURES; PHOTODETECTOR STRUCTURE; SPECTRAL RESPONSES; ULTRA-VIOLET LIGHT; ULTRAVIOLET PHOTODIODES;

PHOTODETECTORS;

EID: 51849113169     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/9/095021     Document Type: Article

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