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Volumn , Issue , 2008, Pages 325-328

A stage-bypass SOI-CMOS switch for multi-mode multi-band applications

Author keywords

CMOS; DPDT; Insertion loss; Isolation; Linearity; Multi band; Multi mode; SOI; SPDT; Switch; Transmit power control

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC SWITCHES; ELECTRONICS INDUSTRY; RADIO BROADCASTING; RADIO WAVES; SEMICONDUCTOR SWITCHES; STANDARDS;

EID: 51849103827     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2008.4561446     Document Type: Conference Paper
Times cited : (13)

References (8)
  • 1
    • 34548839345 scopus 로고    scopus 로고
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    • Feb
    • A. Kavousian et al., '"A Digitally Modulated Polar CMOS PA with 20MHz Signal BW"," in Proc. 2007 IEEE Int. Solid-State Circ. Conf., pp. 78-79, Feb. 2007.
    • (2007) Proc. 2007 IEEE Int. Solid-State Circ. Conf , pp. 78-79
    • Kavousian, A.1
  • 2
    • 29044450495 scopus 로고    scopus 로고
    • All-Digital PLL and Transmitter for Mobile Phones
    • R. B. Staszewski et al., "All-Digital PLL and Transmitter for Mobile Phones." IEEE J. Solid-State Circuits, vol. 40, no. 12. pp. 2469-2482, 2005.
    • (2005) IEEE J. Solid-State Circuits , vol.40 , Issue.12 , pp. 2469-2482
    • Staszewski, R.B.1
  • 4
    • 0035274679 scopus 로고    scopus 로고
    • A 0.5-um CMOS T/R Switch for 900-MHz Wireless Applications
    • F.-J. Huang and Kenneth O., "A 0.5-um CMOS T/R Switch for 900-MHz Wireless Applications," IEEE J. Solid-State Circuits, vol. 36. pp. 486-492, 2001.
    • (2001) IEEE J. Solid-State Circuits , vol.36 , pp. 486-492
    • Huang, F.-J.1    Kenneth, O.2
  • 5
    • 0038306282 scopus 로고    scopus 로고
    • An Integrated 5.2 GHz CMOS T/R Switch with LC-Tuned Substrate Bias
    • Digest of Technical Papers, pp, Feb
    • N. Talwalkar et al., "An Integrated 5.2 GHz CMOS T/R Switch with LC-Tuned Substrate Bias," in 2003 ISSCC Digest of Technical Papers, pp. 428-429, Feb. 2003.
    • (2003) 2003 ISSCC , pp. 428-429
    • Talwalkar, N.1
  • 6
    • 0031341419 scopus 로고    scopus 로고
    • Substrate crosstalk reducing using SOI technology
    • J. P. Raskin et al., "Substrate crosstalk reducing using SOI technology", IEEE Trans. Electron Devices, vol. 44, pp. 2251-2261, 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 2251-2261
    • Raskin, J.P.1
  • 7
    • 0024936413 scopus 로고
    • Monolithic FET Structures for High-Power Control Component Applications
    • M.B. Shifrin et al., "Monolithic FET Structures for High-Power Control Component Applications," in IEEE Trans. Microwave Theory Techniques, vol. 37, pp. 2134-2141, 1989.
    • (1989) IEEE Trans. Microwave Theory Techniques , vol.37 , pp. 2134-2141
    • Shifrin, M.B.1
  • 8
    • 0042591177 scopus 로고    scopus 로고
    • A High Power Handling GSM Switch IC with New Adaptative Control Voltage Generator Circuit Scheme
    • June
    • K. Numata et al., "A High Power Handling GSM Switch IC with New Adaptative Control Voltage Generator Circuit Scheme." in 2003 IEEE MTT-S Digest of Technical Papers, pp.233-236, June 2003.
    • (2003) 2003 IEEE MTT-S Digest of Technical Papers , pp. 233-236
    • Numata, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.