A high-power-handling GSM switch IC with new adaptive-control-voltage-generator circuit scheme

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 233-236

  Numata, Keiichi ^a   Takahashi, Yuji ^a   Maeda, Tadashi ^a   Hida, Hikaru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADAPTIVE CONTROL SYSTEMS; BANDWIDTH; ELECTRIC POTENTIAL; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; INSERTION LOSSES; VOLTAGE CONTROL;

HIGH-POWER-HANDLING;

SWITCHING CIRCUITS;

EID: 0042591177     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K. Numata, Y. Takahashi, T. Maeda and H. Hida, "A +2.4/0 V Controlled High Power GaAs SPDT Antenna Switch IC for GSM Application," IEEE MTT-S Radio Frequency Integrated Circuit Symposium Digest, 2002 pp. 141-144
2. M. Masuda, N. Ohbata, H. Ishiuchi, K. Onda, and R. Yamamoto, "High Power Heterojunction GaAs Switch IC with P-1dB of more than 38dBm for GSM Application," IEEE GaAs IC Symposium Digest, 1998, pp. 229-232
3. K. Kohama, T.Ohgihara and Y. Murakami, "High Power DPDT Antenna Switch MMIC for Digital Cellular Systems," IEEE Journal of Solid-State Circuits, Vol. 31, No.10 Oct. 1996, pp. 1406-1411
4. H. Uda, T. Yamada, T. Sawai, K. Nogawa, and Y. Harada, "High-Performance GaAs Switch IC's Fabricated Using MESFET's with Two Kinds of Pinch-off Voltage and a Symmetrical Pattern Configuration," IEEE Journal of Solid-State Circuits, Vol. 29, No. 10 Oct. 1994, pp. 1262-1269
5. M. B. Shifrin, P. J. Katzin and Y. Ayasli, "Monolithic FET Structures for High-Power Control Component Applications," IEEE Transaction on Microwave Theory and Techniques, Vol. 37, No. 12, Dec. 1989, pp. 2134-2141
6. N. Iwata, K. Inosako and K. Kuzuhara, "3 V Operation L-band Power Double-doped Double Heterojunction FETs," IEEE MTT-S International Microwave Symposium Digest, 1993, pp. 1465-1468