Dual-doped TMAH silicon etchant for microelectromechanical structures and systems applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 738-742

  Paranjape, M ^a   Pandy, A ^b   Brida, S ^c   Landsberger, L ^b   Kahrizi, M ^b   Zen, M ^c  

^a GEORGETOWN UNIVERSITY   (United States)

^b Civil and Environmental Engineering   (Canada)

^c Ist per Ric Scientifica T   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; AMMONIUM COMPOUNDS; CATALYST SELECTIVITY; ETCHING; MICROMACHINING; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ANISOTROPIC SILICON ETCHANT; ETCH RATE; TETRAMETHYL AMMONIUM HYDROXIDE;

MICROELECTROMECHANICAL DEVICES;

EID: 0034156508     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582169     Document Type: Article

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