3.6 mΩ cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 3, 2004, Pages 231-237

  Zhao, J H ^a   Tone, K ^a   Li, X ^b   Alexandrov, P ^b   Fursin, L ^b   Weiner, M ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); POWER INTEGRATED CIRCUITS; SILICON CARBIDE;

BLOCKING VOLTAGE; LOW SPECIFIC ON RESISTANCE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 3042621018     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040452     Document Type: Article

References (22)

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