Fast switching (41 MHz), 2.5 mΩ-cm2, high current 4H-SiC VJFETs for high power and high temperature applications

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1183-1186

  Cheng, L ^a   Casady, J R B ^a   Mazzola, M S ^b   Bondarenko, V ^b   Kelley, R L ^a   Sankin, I ^a   Merrett, J N ^a   Casady, J B ^a  

^a SemiSouth Laboratories Inc   (United States)

^b MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Fast switching; High current; High frequency; High power; High temperature; JFET; Low on resistance; Maximum switching frequency

Indexed keywords

CURRENT DENSITY; DRAIN CURRENT; HIGH TEMPERATURE APPLICATIONS; SILICON CARBIDE;

FAST SWITCHING; HIGH CURRENT; MAXIMUM SWITCHING FREQUENCY;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 37849028309     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1183     Document Type: Conference Paper

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