Influence of oxygen composition and carbon impurity on electronic reliability of HfO2

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 165-168

  Suzuki, K ^a   Ito, Y ^a   Miura, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL ANALYSIS; ENERGY GAP; MOLECULAR DYNAMICS; MOLECULAR OXYGEN; POINT DEFECTS; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICES;

DONOR AND ACCEPTOR; ELECTRONIC PERFORMANCE; ELECTRONIC RELIABILITIES; ENERGY DIFFERENCES; HAFNIUM DIOXIDE FILM; INFLUENCE OF OXYGEN; QUANTUM CHEMICAL MOLECULAR DYNAMICS; STRUCTURAL CHARACTERISTICS;

HAFNIUM OXIDES;

EID: 84901297347     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_40     Document Type: Conference Paper

References (1)

1. Y. Ito et al., Proc. of the 2006 Int. Conf. on Simulation of Semiconductor Processes and Devices. 150 (2006).