An update on the progress in high-n immersion lithography

Journal of Photopolymer Science and Technology

Volumn 21, Issue 5, 2008, Pages 613-620

  Sewell, Harry ^a   Graeupner, Paul ^c   McCafferty, Diane ^a   Markoya, Louis ^a   Samarakone, Nandasiri ^a   Van Wijnen, Paul ^b   Mulkens, Jan ^b   Benschop, Jos ^b  

^a ASML US Inc   (United States)

^b ASML   (Netherlands)

^c CARL ZEISS SMT AG   (Germany)

Author keywords

193nm lithography; High n immersion; Immersion defects; LuAG

Indexed keywords

EID: 51549087355     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.21.613     Document Type: Review

References (12)

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2. Roger H.French, V.Liberman, et.al., "High-index immersion lithography with second-generation immersion fluids to enable numerical apertures of 1.55 for cost effective 32-nm half pitches," Proc. SPIE 6520 (2007).
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11. Steven R.Brueck, Abani M.Biswas, "Extension of 193-nm immersion optical lithography to the 22-nm half-pitch node," Proc. SPIE 5377 (2004).
12. A.Vanleenhove, D.Van Steenwinckel, "A litho-only approach to double patterning," Proc. SPIE 6520 (2007).