Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III-V opto-electronic devices

Current Applied Physics

Volumn 4, Issue 6, 2004, Pages 679-684

  Ramamoorthy, K ^a   Jayachandran, M ^b   Sankaranarayanan, K ^a   Misra, Pankaj ^c   Kukreja, L M ^c   Sanjeeviraja, C ^a  

^a ALAGAPPA UNIVERSITY   (India)

^b CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^c RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

Buffer layer on InP; Laser epitaxy; Semiconducting materials; Solar cells; Thin film structure and morphology

Indexed keywords

EID: 5144224177     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2004.04.001     Document Type: Article

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