Hydrogen plasma enhanced alignment on CNT-STM tips grown by liquid catalyst-assisted microwave plasma-enhanced chemical vapor deposition

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7750-7754

  Tung, Fa Kuei ^a   Yoshimura, Masamichi ^a   Ueda, Kazuyuki ^a   Ohira, Yutaka ^b   Tanji, Takayoshi ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Alignment; CNT; CVD; Hydrogen plasma; SPM

Indexed keywords

ALIGNMENT; CATALYSTS; CHEMICAL VAPOR DEPOSITION; FIELD EMISSION MICROSCOPES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; YARN;

AMORPHOUS LAYER; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HYDROGEN PLASMA TREATMENTS; HYDROGEN PLASMAS; LIQUID CATALYST; MICROWAVE ENHANCED CHEMICAL VAPOR DEPOSITION; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; OUTER SHELLS;

CARBON NANOTUBES;

EID: 51249104906     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.046     Document Type: Article

References (23)

1. Iijima S. Nature 354 (1991) 56
2. Iijima S., and Ichihashi T. Nature 363 (1993) 603
3. Arie T., Akita S., and Nakayama Y. J. Phys. D 31 (1999) L49
4. Cheung C.L., Hafner J.H., Odom T.W., Kim K., and Lieber C.M. Appl. Phys. Lett. 76 (2000) 3136
5. Mizutani W., Choi N., Uchihashi T., and Tokumoto H. Jpn. J. Appl. Phys. 40 (2001) 4328
6. Yenilmez E., Wang Q., Chen R.J., Wang D., and Da H. Appl. Phys. Lett. 80 (2002) 2225
7. Shingaya Y., Nakayama T., and Aono M. Physica B 323 (2002) 153
8. Tang J., Gao B., Geng H., Velev O.D., Qin L.-C., and Zhou O. Adv. Mater. 15 (2003) 1352
9. Yoshimura M., Jo S., and Ueda K. Jpn. J. Appl. Phys. 42 (2003) 4841
10. Tanaka K., Yoshimura M., and Ueda K. e-J. Surf. Sci. Nanotechnol. 4 (2006) 276
11. Dresselhaus M.S., Dresselhaus G., and Avouris Ph. Carbon Nanotubes; Synthesis, Structure, Properties and Application (2001), Springer, Berlin
12. Ishikawa M., Yoshimura M., and Ueda K. Jpn. J. Appl. Phys. 44 (2005) 1502
13. Ishikawa M., Yoshimura M., and Ueda K. Appl. Surf. Sci. 188 (2001) 456
14. K. Ueda, M. Yoshimura, T. Nagamura, Japan Patent 3557589 (2004).
15. Ishikawa M., Yoshimura M., and Ueda K. Physica B 323 (2002) 184
16. F.-K. Tung, M. Yoshimura., K. Ueda, Y. Ohira, T. Tanji, unpublished.
17. Kang M.H., Kim Y.D., and Jeon H.T. J. Korean Phys. Soc. 39 6 (2001) 1072
18. Ahn K.S., Kim J.H., Lee K.N., Lee C.H., Kim C.O., Hong J.P., Jeon Y.J., and Cheong H. J. Korean Phys. Soc. 45 1 (2004) 154
19. Dujardin E., Hiura T.W.E.H., and Tanigaki K. Science 265 (1994) 1850
20. Kawaki S., Moon W.-C., Yoshimura M., and Ueda K. J. Vac. Soc. Jpn. 46 5 (2003) 429
21. Bounouh Y., Theye M.L., Dehbi-Alaoui A., Matthews A., and Stoquert J.P. Phys. Rev. B 51 15 (1995) 51
22. M. J. Matthews, M. A. Pimenta, G. Dresselhaus, M. S. Dresselhaus, M. Endo, Phys. Rev. B, 59, NUMBER 10 R6585.
23. Boutroy N., Pernal Y., Rius J.M., Auger F., von Bardeleben H.J., Cantin J.L., Abel F., Zeinert A., Casiraghi C., Ferrari A.C., and Robertson J. Diamond Relat. Mater. 15 (2006) 921