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Volumn 254, Issue 23, 2008, Pages 7868-7871
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In situ monitoring of nucleation and evolution of Ge nanodots on faintly oxidized Si(1 1 1) surfaces
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Author keywords
Epitaxial growth; Ge nanodot; The critical nucleus; UHV in situ HR profile TEM
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Indexed keywords
EPITAXIAL GROWTH;
GERMANIUM;
NANODOTS;
NANOSTRUCTURED MATERIALS;
NUCLEATION;
OXIDE FILMS;
SILICON COMPOUNDS;
COHESIVE ENERGIES;
CRITICAL NUCLEI;
CRITICAL NUCLEUS SIZE;
GERMANIUMS (GE);
GROWTH PHENOMENA;
IMAGING GEOMETRY;
IN- SITU MONITORING;
NUCLEATION AND EVOLUTIONS;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
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EID: 51249084787
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.03.002 Document Type: Article |
Times cited : (5)
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References (16)
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