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Volumn 254, Issue 23, 2008, Pages 7868-7871

In situ monitoring of nucleation and evolution of Ge nanodots on faintly oxidized Si(1 1 1) surfaces

Author keywords

Epitaxial growth; Ge nanodot; The critical nucleus; UHV in situ HR profile TEM

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; NANODOTS; NANOSTRUCTURED MATERIALS; NUCLEATION; OXIDE FILMS; SILICON COMPOUNDS;

EID: 51249084787     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.002     Document Type: Article
Times cited : (5)

References (16)
  • 11
    • 51249084653 scopus 로고    scopus 로고
    • N. Tanaka, S.-P. Cho, A.A. Shklyaev, J. Yamasaki, E. Okunishi, M. Ichikawa, Appl. Surf. Sci., in press.
    • N. Tanaka, S.-P. Cho, A.A. Shklyaev, J. Yamasaki, E. Okunishi, M. Ichikawa, Appl. Surf. Sci., in press.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.