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Volumn 29, Issue 4, 2008, Pages 718-722

Structural and optical properties of MgxZn1-xO thin films prepared by sol-gel method

Author keywords

MgxZn1 xO films; Photoluminescence; Sol gel method; XRD

Indexed keywords


EID: 50949123218     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (11)
  • 2
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  • 3
    • 0036131756 scopus 로고    scopus 로고
    • 1-x O thin films prepared by the sol-gel method [J]
    • 1-x O thin films prepared by the sol-gel method [J]. J. Cryst Growth, 2002, 234(2-3):427-430.
    • (2002) J. Cryst Growth , vol.234 , Issue.2-3 , pp. 427-430
    • Zhao, D.1    Liu, Y.2    Shen, D.3
  • 4
    • 48949109645 scopus 로고    scopus 로고
    • 1-x O alloy grown by P-MBE and optical properties of MgZnO/ZnO heterostructure [J]
    • in Chinese
    • 1-x O alloy grown by P-MBE and optical properties of MgZnO/ZnO heterostructure [J]. Chin. J. Lumin., 2006, 27(4):831-833 (in Chinese).
    • (2006) Chin. J. Lumin , vol.27 , Issue.4 , pp. 831-833
    • Wei, Z.1    Wu, C.2    Lu, Y.3
  • 5
    • 43149119001 scopus 로고    scopus 로고
    • x O thin films grown by ultrasonic spray pyrolysis [J]
    • in Chinese
    • x O thin films grown by ultrasonic spray pyrolysis [J]. Chin. J. Lumin. 2006, 27(4):503-507 (in Chinese).
    • (2006) Chin. J. Lumin , vol.27 , Issue.4 , pp. 503-507
    • Xia, Z.1    Li, X.2    Chen, T.3
  • 8
    • 34547453761 scopus 로고    scopus 로고
    • 0.3 O gate dielectric for transparent electronics [J]. J. Appl. Phys., 2007, 101(12):123717-1-6.
    • 0.3 O gate dielectric for transparent electronics [J]. J. Appl. Phys., 2007, 101(12):123717-1-6.
  • 9
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    • 1-x O on Si ( 100) for deep ultra-violet photodetectors [J]
    • 1-x O on Si ( 100) for deep ultra-violet photodetectors [J]. Appl. Phys. Lett., 2003, 82(20):3424-3426.
    • (2003) Appl. Phys. Lett , vol.82 , Issue.20 , pp. 3424-3426
    • Yang, W.1    Hullavarad, S.S.2    Nagaraj, B.3
  • 10
    • 18444399372 scopus 로고    scopus 로고
    • Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J]
    • Kazuto Koike, Kenji Hama, Ippei Nakashima, et al. Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J]. J. Cryst. Growth, 2005, 278(1-4):288-292.
    • (2005) J. Cryst. Growth , vol.278 , Issue.1-4 , pp. 288-292
    • Koike, K.1    Hama, K.2    Nakashima, I.3
  • 11
    • 1942473631 scopus 로고    scopus 로고
    • 1-x O thin films prepared by sol-gel dip coating [J]
    • 1-x O thin films prepared by sol-gel dip coating [J]. J. Cryst. Growth, 2004, 265(3-4):537-540.
    • (2004) J. Cryst. Growth , vol.265 , Issue.3-4 , pp. 537-540
    • Zhenguo, J.1    Song, Y.2    Yin, X.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.