Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 201-204

  Aldegunde, Manuel ^a   Garcia Loureiro A J ^a   Martinez, A ^b   Kalna, K ^b  

^a UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Finite element method; Monte Carlo simulation; MOSFET; Parallel device simulation; Tetrahedral elements

Indexed keywords

CHLORINE COMPOUNDS; FINITE ELEMENT METHOD; MOSFET DEVICES; POISSON EQUATION; THREE DIMENSIONAL;

MONTE CARLO SIMULATION; MOSFET; PARALLEL DEVICE SIMULATION; TETRAHEDRAL ELEMENTS;

MONTE CARLO METHODS;

EID: 50949087827     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0241-3     Document Type: Article

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