3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 267-271

  Ramey, S M ^a   Ferry, D K ^a  

^a Arizona State University   (United States)

Author keywords

effective potential; Monte Carlo; SOI MOSFET

Indexed keywords

MONTE CARLO METHODS; QUANTUM THEORY; THRESHOLD VOLTAGE;

CLASSICAL SIMULATION; DOPANT DISTRIBUTION; EFFECTIVE POTENTIALS; ELECTRON DISTRIBUTIONS; QUANTUM MECHANICAL EFFECTS; RANDOM DISCRETE DISTRIBUTION; SOI-MOSFETS; UNIFORM DISTRIBUTION;

MOSFET DEVICES;

EID: 44349112570     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020750229987     Document Type: Article

References (7)

1. Ferry D.K. 2000. SuperLatt. Microstruct. 27: 61.
2. Ferry D.K. 2001. VLSI Design 13: 155.
3. Ferry D.K. and Barker J.R. 1998. VLSI Design 8: 165.
4. Ferry D.K., Ramey S.M., Shifren L., and Akis R. J. Comp. Electron. 1: 59.
5. Gross W.J., Vasileska D., and Ferry D.K. 2000. IEEE Trans. Elec. Dev. 47: 1831.
6. Ramey S.M. and Ferry D.K. 2002. Physica B: Condensed Matter. 314: 50.
7. Zhou J.R. and Ferry D.K. 1995. IEEE Computational Science and Engineering 2(2): 30.