C- v characteristics of mos structures fabricated of al-doped p-type 3c-sic epilayers grown on si by chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 30, Issue 2 R, 1991, Pages 240-243

  Shinohara, Mikiya ^b   Yamanaka, Mitsugu ^b   Misawa, Shunji ^a   Okumura, Hajime ^a   Yoshida, Sadafumi ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NISSAN MOTOR CO   (Japan)

Author keywords

3C SiC; Al doped; C V characteristic; Fixed oxide charge; Flat band voltage; MOS structure; P type; Space charge density

Indexed keywords

ALUMINUM AND ALLOYS; SEMICONDUCTING SILICON; SILICON CARBIDE - CHEMICAL VAPOR DEPOSITION; CARBON;

C-V CHARACTERISTICS; EPILAYERS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026108747     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.240     Document Type: Article

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