Identification of RF power amplifier memory effect origins using third-order intermodulation distortion amplitude and phase asymmetry

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 1121-1124

  Stevenson Kenney, J ^a   Fedorenko, Pavlo ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; EQUIVALENT CIRCUITS; GALLIUM NITRIDE; INTERMODULATION DISTORTION; MOS DEVICES; SEMICONDUCTOR DEVICE MODELS;

EQUIVALENT CIRCUIT MODELS; FREQUENCY SPACING; MEMORY EFFECTS; PHASE ASYMMETRY;

POWER AMPLIFIERS;

EID: 34250350498     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249387     Document Type: Conference Paper

References (13)

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