Comparative ellipsometric and ion beam analytical studies on ion beam crystallized silicon implanted with Zn and Pb ions

Thin Solid Films

Volumn 516, Issue 22, 2008, Pages 8009-8012

  Lohner, Tivadar ^a   Angelov, Christo ^b   Mikli, Valdek ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE FOR NUCLEAR RESEARCH AND NUCLEAR ENERGY   (Bulgaria)

^c TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

Author keywords

Channeling; Ellipsometry; Ion beam induced epitaxial crystallization; Ion implantation; Optical properties; Rutherford Backscattering Spectrometry; Silicon

Indexed keywords

BEAM PLASMA INTERACTIONS; ELECTROLYSIS; ION BEAMS; ION BOMBARDMENT; IONS; LEAD; LEAD ALLOYS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; ZINC;

AMORPHOUS LAYERS; CHANNELING; ELLIPSOMETRY; ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION; ION IMPLANTATION; OPTICAL PROPERTIES; PB IONS; RUTHERFORD BACKSCATTERING SPECTROMETRY;

AMORPHOUS SILICON;

EID: 50649085695     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.04.048     Document Type: Article

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