High-current, NO-annealed lateral 4H-SiC MOSFETs

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 981-984

  Das, M K ^a   Chung, G Y ^b   Williams, J R ^b   Saks, N S ^c   Lipkin, L A ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b AUBURN UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

4H SiC; Channel mobility; Hall effect; Interface states; MOS; MOSFETs; NO

Indexed keywords

ANNEALING; GATE DIELECTRICS; HALL EFFECT; HALL MOBILITY; INTERFACE STATES; MOLYBDENUM; NOBELIUM; SILICA; SILICON CARBIDE; SILICON WAFERS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); MOS CAPACITORS; NITROGEN OXIDES; PASSIVATION;

4H-SIC; CHANNEL MOBILITY; CHANNEL ORIENTATIONS; HALL EFFECT MEASUREMENT; INTERFACE STATE DENSITY; LARGE AREA DEVICES; MOSFETS; SPECIFIC-ON RESISTANCE;

MOSFET DEVICES;

EID: 0036435336     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.981     Document Type: Conference Paper

References (5)

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