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Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1297-1302

Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI

(9) Bernard, Emilie a,b Ernst, T a Guillaumot, B b Vulliet, N b Garros, X a Maffini Alvaro, V a Coronel, P b Skotnicki, T b Deleonibus, S a

a CEA LETI (France)

b STMICROELECTRONICS (France)

Author keywords

3D MCFET; Gate leakage; High K; Metal gate; Mobility; NBTI

Indexed keywords

3D MCFET; ELECTRICAL CHARACTERISTICS; ELECTRICAL PERFORMANCES; GATE LEAKAGE; GATE STACKS; HIGH-K; METAL GATE; MOBILITY; MULTI CHANNELS; NBTI;

ELECTRON BEAM LITHOGRAPHY;

ELECTRIC EQUIPMENT; ELECTRIC PHENOMENA; ELECTRON BEAMS; LEAKAGE; LITHOGRAPHY; TEMPERATURE; TRANSISTORS;

EID: 50349088490 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2008.04.014 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.